凯发

Speaker-Hongwei Zhu

Hongwei Zhu
Tsinghua University, China
Hongwei Zhu is currently a professor in the School of Materials Science and Engineering. He received his B.S. degree in Mechanical Engineering at Tsinghua University in 1998. He started his doctoral studies under the direction of Prof. Dehai Wu and received a Ph.D. degree in Materials Processing Engineering in 2003. After Post Doc. researches in Japan (2003.9~2004.8) and USA (2004.8~2008.3), he began his independent career as a faculty member at the Department of Mechanical Engineering, Tsinghua University (2008.4~2012.12). His research involves synthesis, characterizations and energy/environmental applications of macrostructures of nanomaterials. He received New Century Excellent Talents in University in 2008, 2nd-Class National Natural Science Award in 2006, 1st-Class Education Ministry Nominated Scientific and Technology Achievements Award in 2005, National Excellent Doctoral Dissertation Award in 2005.
Title:Graphene-based Solar Cells and Photodetectors
SymposiumSolar Cell
Starting Time
Ending Time
Abstract

Graphene has the potential for creating thin film devices, owing to its two-dimensionality and structural flatness. Graphene serves multiple functions as transparent electrode, active junction layer, hole collector and anti-reflection layer in the graphene-on-semiconductor heterojunction solar devices. Chemical doping reduces the sheet resistance and increases the work function of graphene, while organic filling of graphene facilitates the hole injection and extraction, resulting in high-quality Schottky junctions and enhanced solar energy conversion efficiency. Nanowires, micropillars of semiconductors further reduce the use of materials, significantly suppress the reflection, and provide more surface for light harvesting.

The Schottky junction properties and photoelectric conversion of reduced graphene oxide (RGO) have also been investigated, primarily by analyzing their current-voltage characteristics. The ON/OFF ratio, responsivity and detectivity of the RGO/n-Si photodetectors are closely examined, proving that RGO material could be effectively utilized as the electrode material; plus, their relationship with the RGO reduction levels has also been explored. By analyzing the response/recovery speed of the RGO-based photodetectors, we have studied the effects of oxygen-containing functional groups and crystalline defects on the photoelectric conversion.

Main Organizer

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E-mail: meeting@c-gia.org

Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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