Zhihong FengHebei Semiconductor Research Institute, China
Feng Zhihong received his Ph.D degree in electrical and electronics engineering from the Hong Kong University of Science and Technology, Hong Kong, China, in 2006. In the same year, he joined the National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China, where he is currently an executive vice director, deputy chief engineer, doctoral supervisor and professor. He has published more than 100 papers. His current research includes advanced semiconductor materials and devices.
Title：Quasi-free-standing bilayer epitaxial graphene and its transistors
SymposiumHigh-frequency Electrics
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Abstract
Owing to its excellent electrical properties, graphene has attracted significant attention as a potential emerging electronic material for future high-speed radio-frequency (RF) electronics[1,2]. Quasi-free-standing epitaxial graphene (QFSEG) is a candidate for high frequency applications due to its high crystal quality, high carrier mobility, and transfer-free.
Here, we report an improved electrical properties of bilayer QFSEG by annealing monolayer EG in molecular hydrogen [3]. Based on previously self-aligned GFET fabrication process [4], the as prepared devices exhibit excellent dc and RF performances. The 100 nm gate-length graphene transistor exhibits a record intrinsic fT of 407 GHz for epitaxial GFETs on SiC substrate. Our works reveal the great potential of bilayer graphene in RF applications for future high-speed electronics.
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