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Speaker-Victor Ryzhii

Victor Ryzhii
Tohoku University, Japan
Victor Ryzhii was born in 1946 in Ukraine (former USSR). In 1967 and 1970, he obtained MS and PhD degrees, respectively, from Moscow Institute of Physics and Technology, Moscow, Russia. In 1976 he got Doctor of Sciences degree (Habilitation) in Physics and Mathematics from USSR Supreme Attestation Commission.
From 1970 to 1993 Dr. Ryzhii occupied academic positions in educational and industrial institutions, as well in the USSR and Russian Academy of Sciences (positions from assistant professor to vice-director of a research institute and vice-president of an association of several research institutions). From 1993 to 2012 Dr. Ryzhii served as a professor of the University of Aizu, Japan. Since his retirement in 2012, he has the title of Emeritus Professor of this university. From 2012 to present, Dr. Ryzhii is a visiting professor of Research Institute of Electrical Communication, Tohoku University, Japan. He is also a principle researcher of Institute of Ultra-High-Frequency Semiconductor Electronics of Russian Academy of Sciences and Research Supervisor of the Center of Photonics and Infrared Engineering of Bauman Moscow State Technical University, Moscow, Russia. Dr. Ryzhii is the author and co-author of numerous publications in the theory and computer modeling of physical processes in micro- and nanostructures and electronic and optoelectronic devices based on these structures.
Dr. Ryzhii was elected Corresponding Member of the USSR Academy of Sciences, currently Russian Academy of Sciences, (1987), Fellow of the Institute of Electrical and Electronics Engineers (2004), and Fellow of the American Physical Society (2004).
Title:Concepts of Terahertz Devices Based on Graphene Heterostructures with Lateral and Vertical p-n Junctions
SymposiumA2 Optoelectronic Devices
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Ending Time
Abstract

Different graphene layer (GL) heterostructures  with lateral p-n junctions can be effective building blocks for novel terahertz (THz) and for  optoelectronic devices. In this presentation, we overview the concepts of different THz devices based on single-GL, bilayer-GL, multiple MGL, and double-GL heterostructures  with the electrically induced p-n junctions: 
(i).  The tunneling  transit-time THz oscillators based on GL reverse-biased  lateral p-n junctions;
(ii). THz detectors using the nonlinearity of the p-n junction current-voltage characteristics and resonant plasmonic effects; 
(iii). Interband THz detectors based on reverse-biased lateral p-n junctions;
(iv). THz lasers based on differen GL structures with  the interband population inversion, ena-bled by the double injection of electrons and holes, with dielectric, slot-line, distributed feedback, and plasmonic  cavities.

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Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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