凯发_Zhi Jin

Speaker-Zhi Jin

Zhi Jin
Institute of Microelectronics,CAS, China

Prof. Zhi Jin received Ph.D. degree in Electrical Engineering from Jilin University, in 1999. From 1999 to 2002, he was a postdoctoral fellow with Research Center for Integrated Quantum Electronics, Hokkaido University, Japan, where he worked on the process development of III-V and GaN based devices. He then worked as researcher with Solid-State Electronics Department, Duisburg-Essen University, Germany and with Electrical Engineering Department, The University of Electro-Communications, Japan, where he worked on GaAs- and InP-based Heterojunction Bipolar Transistors. In 2006, he was with Institute of Microelectronics, Chinese Academy of Sciences as Professor. His research interests include III-V semiconductor-based HBTs and HEMTs, microwave circuits, and graphene-based device and circuits. He has authored/coauthored more than 100 papers published in journals and presented at conferences.

Title：High performance RF graphene field effect transistor

SymposiumStrategic Frontier

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Abstract

　　由于具有超高的载流子迁移率和饱和漂移速度，石墨烯被认为是制备高频器件的理想材料。但是石墨烯高频器件的制备仍然面临各种问题。首先，石墨烯表面缺乏悬挂键，难以沉积高质量低界面态的栅介质。其次，由于独特的线性能带结构和较低的电子态密度，金属石墨烯难以形成理想的欧姆接触。我们利用金属铝做种子层，外加高低温ALD沉积的方式实现了高质量、低界面态Al2O3栅介质在石墨烯表面的沉积。此外，我们还研究了接触区域石墨烯输运机制，通过不同区域费米能级调控降低金属石墨烯接触电阻。通过工艺的整合，我们制备出了高性能的石墨烯场效应晶体管，器件的截止频率达到500GHz。

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E-mail: meeting@c-gia.org

Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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