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Speaker-Deji Akinwande

Deji Akinwande
University of Texas at Austin, USA

Dr. Deji Akinwande received the PhD degree in Electrical Engineering from Stanford University in 2009, where he conducted research on the synthesis, device physics, and circuit applications of carbon nanotubes and graphene. His Master’s research in Applied Physics at Case Western Reserve University pioneered the design and development of near-field microwave probe tips for nondestructive imaging and studies of materials.

He is an Associate Professor with the University of Texas at Austin. Prof. Akinwande has been honored with the inaugural IEEE Nano Geim and Novoselov Graphene Prize, the IEEE “Early Career Award” in Nanotechnology, the NSF CAREER award, the Army and DTRA Young Investigator awards, the 3M Nontenured Faculty Award, and was a past recipient of fellowships from the Ford Foundation, Alfred P. Sloan Foundation, and Stanford DARE Initiative. He recently co-authored a textbook on carbon nanotubes and graphene device physics by Cambridge University Press, 2011. His recent results on silicene have been featured online by nature news, Time magazine among other media outlets. His work on flexible 2D electronics was selected as among the "best of 2012" by the nanotechweb news portal and has been featured on MIT's technology review and other technical media outlets.
Title:From Graphene to Phosphorene: Flexible Adventures with 2D Materials
SymposiumA03 Flexible Electronics
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Abstract

The progress on flexible active nanoelectronics based on 2D materials including graphene, TMDs and phosphorene will be presented. Over the past decade, it has become clear that 2D materials are ideal for flexible electronics owing to their optimum electrostatics, maximum transparency and high mechanical compliance available in thin-film transistors (TFTs). Here, we report on the state of the art 2D RF TFTs on flexible polymeric, rubber and glass substrates. We realize large-area monolayer MoS2 on plastics with 5.6GHz cutoff frequency, a record value for flexible TMDs. For higher frequency devices, flex black phosphorus (BP) RF TFT is demonstrated for the first time with fT ~17.5GHz. In addition, for sub-THz nanosystems, we have achieved record 100GHz graphene TFTs on bendable glass, 56% higher than on PI or PET, largely due to the higher thermal conductivity of glass. Considering bandgaps, our RF results indicates that for flexible nanoelectronics, MoS2 is suitable for low-power RF & high-speed digital, BP is ideal for high-speed analog & RF, and graphene can enable sub-THz analog TFTs.

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E-mail: meeting@c-gia.org

Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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