凯发

Prof. Zhi Jin received Ph.D. degree in Electrical Engineering from Jilin University,in 1999. From 1999 to 2002, he was a postdoctoral fellow with Research Center for Integrated Quantum Electronics, Hokkaido University, Japan,where he worked on the process development of III-V and GaN based devices. He then worked as researcher with Solid-State Electronics Department, Duisburg-Essen University, Germany and with Electrical Engineering Department, The University of Electro-Communications, Japan,where he worked on GaAs- and InP-based Hetero junction Bipolar Transistors. In2006, he was with Institute of Microelectronics, Chinese Academyof Sciences as Professor. His research interests include III-V semiconductor-based HBTs and HEMTs, microwave circuits, and graphene-based device and circuits. He has authored/coauthored more than 100 papers published in journals and presented at conferences.