凯发

Speaker-Shisheng Lin

Shisheng Lin
Zhejiang University, China

Dr. Lin received his B.S degree in Department of Materials Science and Engineering at Zhejiang University in 2005 and received his Ph.D degree in the year of 2010 in Materials Physics & Chemistry supported by “The China State-funded Study Abroad Program” carried out by Zhejiang University and Georgia Institute of Technology (The supervisors were Prof. Zhizhen Ye and Prof. ZhongLin Wang). At 2010, Dr. Lin started to work with Andre Geim (2010 Nobel Prize Winner in Physics) in the area of two-dimenisonal materials as a postdoctoral researcher in the University of Manchester. After returning back to Zhejiang University, he co-operate with Prof. Limin Tong in the area of graphene optics and then started to organize his own research group and published several original papers in the area of graphene, ZnO and other two dimensional materials.

Dr. Lin is currently an Associate Professor in Zhejiang University. Prof. Lin focused on the original topics and initiated two research areas during his career: One is Sodium doped P-type ZnO and the other is two-dimensional ultrathin silicon carbide. Prof. Lin also has a deep insight into fabrication and Raman spectra study of Bilayer and Trilayer graphene, graphene based solar cell devices, graphene based touch screen devices, graphene-ZnO heterostructures. Prof. Lin has published more than 30 papers with over 600 times citation.

Title:Graphene/Semiconductor heterostructure based high performance optoelectronic and electronic devices
SymposiumA03 Flexible Electronics
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Abstract

The electrons in graphene behave as Dirac Fermions and have a very high mobility. The linear electronic band structure of graphene and the low density of states near the Dirac points allow that the Fermi level of graphene is highly tunable. Those merits make graphene/semiconductor heterostructure an outstanding platform for the optoelectronic and electronic device applications. We will summarize our progress on the chemical vapor deposition synthesis of silicon doped graphene and also the progress on the graphene/semiconductor solar cells/photodetectors. We have achieved a high performance graphene/GaAs solar cell with a power conversion efficiency of 18.5%.The van der Waals Schottky diodes is highly tunable based on that the Fermi level of graphene is highly tunable, which has been demonstrated by the Raman spectroscopy measurements. The simulation work demonstrates that a power conversion efficiency over 25% can be finely reached in the near future for the graphene/semiconductor van der Waals Schottky diodes. 

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E-mail: meeting@c-gia.org

Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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