凯发

Speaker-董际臣

董际臣
中国科学院化学研究所
  2010年及2013年于山大大学分别获得理学学生及工学硕士学位(导师:李辉),2016年于香港城市大学获得博士学位(导师:张开黎、丁峰),2016年至2020年在韩国基础科学研究院多维碳材料中心进行博士后阶段的学习工作(合作导师:丁峰),2020年11月加入中国科学院化学研究所,任项目研究员。主要研究领域为二维纳米材料的晶体生长动力学、低维纳米材料的力学及电学行为等。
Title:二维材料的外延生长
Symposium国际石墨烯技术创新论坛
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Abstract

2D materials hold great potentials in nanoelectronics, energy storage and conversion, as well as catalysis, etc, because of their excellent mechanical and electronic properties that are derived from their unique 2D structure. To fully realize the applications of 2D materials, controllable synthesis of 2D materials at large scale is indispensable. Currently, chemical vapor deposition (CVD) has become to be the most promising method of massively synthesizing high-quality 2D materials. Here, I will present a mechanistic discussion on the epitaxial growth of 2D materials from a theoretical perspective, aiming to provide useful guidelines to the controllable synthesis of high-quality 2D materials. 

Main Organizer

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E-mail: meeting@c-gia.org

Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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