凯发

The rapidly increasing business of electronics and technology demands new and outstanding materials capable of showing better performances than the ones used nowadays. It seems that we are entering the era of two dimensional materials, that ever since they have been isolated showed amazing potential for developing new devices based on the use of their extraordinary properties. When it comes to industrialization and commercialization, two main issues have to be faced: utilization of reproducible and affordable standardized manufacturing processes and high quality of the final product. These are therefore the directions to which we commit ourselves. We fabricate graphene by selective sublimation of Silicon Carbide (SiC), following a self-optimized protocol that maintains the main characteristic properties of high quality graphene. As Raman investigations revealed, we obtained SiC substrates covered with more than 85% of graphene ofsuperior quality. Moreover, measurements performed on Hall bar devices fabricated along the SiC terraces corroborated those results. That is: mobilities of the electrons as high as 40000 cm2 V-1s-1,as well as, low magnetic field plate aux on the Quantum Hall Effect have been obtained. All those premises make our graphene an ideal candidate to overcome the difficulties in bringing its potential to the desired industrial scale.